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High Temperature Furnace 99.95% min Tungsten Crucible and Tube For Sapphire Growth Process
Ⅰ,Physical and chemical properties
1 Purity :W≥99.95%;
2 Density:≥18.2g/cm3;
3 Application temperature environment:2300℃.
Ⅱ,Measurements and tolerances
Unit:mm
Delivery condition | Specification | Tolerance | Thickness | Roughness (μm) | ||
Diameter | Height | Diameter | Height | |||
Sinter | 10~500 | 10~750 | ±5.0 | ±5.0 | 8~20 | |
Finished sinter | 10~450 | 10~550 | ±0.5 | ±1.0 | 7~18 | <2.5 |
Special sizes can be manufactured based on customers' requirements
Ⅲ,Manufacturing process and equipment
Item |
Process | Equipment | Quality Check point |
1 | Tungsten powder | 1 Purity of tungsten powder | |
2 | Sieving | High frequency vibrating screen | 2 Fsss,HB |
3 | Mixed powder | V shape mixer | 3 Green strength |
4 | Isostatic pressing | Isostatic pressing machine | 1 Measurement of rough-processed billet |
5 | Rough billet lathing | CNC vertical turning machine | 2 Surface quality of rough-processed billet |
6 | IF sintering | IF induction sintering furnace | 1 Outside measurements of finished product |
7 | Competitive products lathing | High-accuracy vertical turning machine | 2 Surface quality and roughness of finished product, density |
8 | Package | 3 Show certificate of quality |
Ⅳ,Application
Since the melting point of tungsten has reached 3410℃, tungsten crucible (W crucible; wolfram crucible; wolfram barrel; W barrel; wolfram tube, W tube; W pipe; wolfram pipe; wolfram sleeve; tungsten sleeve; wolfram flange; tungsten flange; W flange; wolfram funnel; tungsten funnel) is widely applied in industry furnace such as sapphire growth furnace, quartz glass melting furnace, and rare earth smelting furnace.
The temperature in working environment of tungsten crucible is above 2000℃.
For sapphire crystal growth furnace, high-purity, high- density, no internal -crack tungsten crucible with other features of exact measurement and smooth surface has decisive influence on success ratio of seed growth, quality control of pulling crystal, metamictization pot-committed and service life during sapphire growth process.